| PART |
Description |
Maker |
| BF904A BF904AR BF904AWR |
N-channel dual gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF1105R |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
| BF1109WR BF1109R BF1109 BF1109_R_WR_2 |
N-channel dual-gate MOS-FETs
From old datasheet system
|
Philips
|
| BF1102R BF1102 BF110200 BF1102-15 BF1102-2015 |
Dual N-channel dual gate MOS-FETs
|
NXP Semiconductors
Philips
Quanzhou Jinmei Electro...
|
| BF904 BF904R BF90407 BF904-2015 |
N-channel dual gate MOS-FETs
|
Quanzhou Jinmei Electro...
NXP Semiconductors
|
| 2SK0663 2SK663 2SK06632SK663 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
From old datasheet system
Small-signal device - Small-signal FETs - Junction FETs
|
Panasonic
|
| HEC4002BT HEC4002BT112 |
Dual 4-input NOR gate; Package: SOT108-1 (SO14); Container: Tube 4000/14000/40000 SERIES, DUAL 4-INPUT NOR GATE, PDSO14
HEF4002B gates; Dual 4-input NOR gate
|
NXP Semiconductors N.V.
Philips
|
| 74AUP1G885GN 74AUP1G885GS 74AUP1G885DC |
Low-power dual function gate AUP/ULP/V SERIES, DUAL 3-INPUT XOR GATE, PDSO8
Low-power dual function gate 低功耗双功能
|
NXP Semiconductors N.V.
|
| FAN1086D-2.85 FAN1086S-3.3 FAN1086S-2.5 FAN1086M-2 |
Neuron ICs; Max. Input Clock: 20 MHz; EEPROM: 2 KB; RAM: 2 KB; ROM: 16 KB; Package: 32 pin SOP; External Memory I/F: No
; Sensitivity dBµmV: 93 ~ 107; Package: SSOP16; Production Status: MP
FETs Nch 30VFETs Nch 30VPhase Lock Loop; Dual or Single: Single; Features: Integer - N; Power Supply V: 2.4 ~ 3.5; ImA: 4.8; Input FMHz: 700 ~ 1800; Operating Freq-MHz: 5 ~ 25; Sensitivity dBµmV: 92 ~ 107; Package: SSOP10; Production Status: MP
FETs Nch 30VFETs Nch 30VFETs Nch 30VMOSFETs - Nch VDSS=30V; Surface Mount Type: Y; Package: TSSOP-8; Number Of Pins: 8; R DS On (Ω): (max 0.018) (max 0.013) (max 0.012); I_S (A): (max 6)
FETs Nch 30VFETs Nch 30VFETs Nch 30VFETs Nch 30VTHREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS
积极的固定电压稳压器
FETs Nch 30V<VDSS=60V; ; Package: TO-3P(N); R DS On (O): (max 0.055) (max 0.03); I_S (A): (max 45)
FETs Nch 30V<VDSS=60V; Surface Mount Type: N; Package: TO-220NIS; R DS On (O): (max 0.025) (max 0.017); I_S (A): (max 45)
|
|
| LM5113-Q1 LM5113QDPRRQ1 |
<font color=red>[Old version datasheet]</font> 100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs
|
TI store
|
